Kingmax Semiconductor FLGF65F-C8KJ9A 4GB vs Lexar Co Limited LD4AU016G-H2666G 16GB

总分

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

总分

Lexar Co Limited LD4AU016G-H2666G 16GB

Lexar Co Limited LD4AU016G-H2666G 16GB

差异规格评论

差异

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

需要考虑的原因
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 29

左右 24% 更低的延时

Lexar Co Limited LD4AU016G-H2666G 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H2666G 16GB

报告一个错误

更快的读取速度，GB/s

16.9 15.1

测试中的平均数值
更快的写入速度，GB/s

11.1 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Lexar Co Limited LD4AU016G-H2666G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

22 29
读取速度，GB/s

15.1 16.9
写入速度，GB/s

10.0 11.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2423 3167

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA41GU6MFR8N-TF 8GB

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Mushkin MRX4U300GJJM16G 16GB

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Samsung M471B5273EB0-CK0 4GB

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Crucial Technology CT8G4DFS8213.M8FH 8GB

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Kingston KVR24N17S8/4 4GB

Kingston KVR24N17S8/4 4GB