Kingmax Semiconductor FLGF65F-C8KJ9A 4GB vs Samsung M393A2G40EB1-CRC 16GB

总分

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

总分

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

差异规格评论

差异

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

需要考虑的原因
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 55

左右 60% 更低的延时
更快的读取速度，GB/s

15.1 9.3

测试中的平均数值
更快的写入速度，GB/s

10.0 7.4

测试中的平均数值

Samsung M393A2G40EB1-CRC 16GB

需要考虑的原因
Samsung M393A2G40EB1-CRC 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Samsung M393A2G40EB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

22 55
读取速度，GB/s

15.1 9.3
写入速度，GB/s

10.0 7.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2423 2078

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMY8GX3M2A2666C10 4GB

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Panram International Corporation W4U3200PS-16G 16GB

Panram International Corporation W4U3200PS-16G 16GB

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Patriot Memory (PDP Systems) PSD44G266682 4GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMK32GX4M2C3200C18 16GB

Corsair CMK32GX4M2C3200C18 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

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Corsair CM4X16GE2666C16K4 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB