Kingmax Semiconductor KLDD48F-B8KU5 1GB vs Crucial Technology BL16G36C16U4RL.M16FE 16GB

总分

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分

Crucial Technology BL16G36C16U4RL.M16FE 16GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

差异规格评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB

需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值

Crucial Technology BL16G36C16U4RL.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4RL.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 61

左右 -118% 更低的延时
更快的写入速度，GB/s

14.1 1,670.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Crucial Technology BL16G36C16U4RL.M16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 28
读取速度，GB/s

3,529.3 15.9
写入速度，GB/s

1,670.4 14.1
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

517 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT25664BA160B.C16F 2GB

Samsung M471A1G43DB0-CPB 8GB

Samsung M471A1G43DB0-CPB 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CM4B16G1J2400A16K2-O 16GB

Corsair CM4B16G1J2400A16K2-O 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMW32GX4M4Z3200C16 8GB

Corsair CMW32GX4M4Z3200C16 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Crucial Technology CT8G4SFD824A.C16FBD1 8GB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

G Skill Intl F4-3200C22-32GRS 32GB

G Skill Intl F4-3200C22-32GRS 32GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

King Tiger Technology Tigo-2400MHz-4G 4GB

King Tiger Technology Tigo-2400MHz-4G 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

G Skill Intl F4-2400C15-16GVR 16GB

G Skill Intl F4-2400C15-16GVR 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

Crucial Technology BLT4G4D30AETA.K8FD 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

SK Hynix HMA851S6DJR6N-XN 4GB

SK Hynix HMA851S6DJR6N-XN 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

Micron Technology 36ASF4G72PZ-2G3A1 32GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Mushkin MRA4S320GJJM32G 32GB

Mushkin MRA4S320GJJM32G 32GB