Kingmax Semiconductor KLDD48F-B8KU5 1GB vs Crucial Technology BLS16G4D26BFSB.16FBD 16GB

总分

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

差异规格评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB

需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB

报告一个错误

更快的读取速度，GB/s

3 17.9

测试中的平均数值

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 61

左右 -177% 更低的延时
更快的写入速度，GB/s

12.6 1,670.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 22
读取速度，GB/s

3,529.3 17.9
写入速度，GB/s

1,670.4 12.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

517 3152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX4GX3M1A1333C9 4GB

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Maxsun MSD48G26Q3 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

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Kingston HP669238-071-HYC 4GB

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Corsair CMK16GX4M4B3400C16 4GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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Corsair CMD16GX4M2B2400C10 8GB