Kingmax Semiconductor KLDD48F-B8KU5 1GB vs Crucial Technology CT8G4DFD8213.C16FBD2 8GB

总分

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

差异规格评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB

需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FBD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 61

左右 -91% 更低的延时
更快的写入速度，GB/s

11.8 1,670.4

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 32
读取速度，GB/s

3,529.3 15.5
写入速度，GB/s

1,670.4 11.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

517 2858

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston XK2M26-MIE 16GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology BLS16G4D30AESC.M16FE 16GB

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Kingston 99U5429-007.A00LF 2GB

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Corsair CMH16GX4M2D3600C18 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HMAA4GS6AJR8N-VK 32GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMK128GX4M8X3600C18 16GB

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Mushkin 996902 2GB

Mushkin 996902 2GB

Crucial Technology CT16G4DFRA266.C16FP 16GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Wilk Elektronik S.A. W-HK26S16G 16GB

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