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Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-4133C17-8GTZR 8GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB vs G Skill Intl F4-4133C17-8GTZR 8GB

总分
star star star star star
Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分
star star star star star
G Skill Intl F4-4133C17-8GTZR 8GB

G Skill Intl F4-4133C17-8GTZR 8GB

差异 规格 评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB 需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 19.5
    测试中的平均数值
G Skill Intl F4-4133C17-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4133C17-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 61
    左右 -144% 更低的延时
  • 更快的写入速度，GB/s
    16.2 left arrow 1,670.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-4133C17-8GTZR 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 25
  • 读取速度，GB/s
    3,529.3 left arrow 19.5
  • 写入速度，GB/s
    1,670.4 left arrow 16.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    517 left arrow 3890

Kingmax Semiconductor KLDD48F-B8KU5 1GB RAM的比较

Kingmax Semiconductor KLDD48F-A8KB5 1GB
Patriot Memory (PDP Systems) PSD21G800816 1GB

G Skill Intl F4-4133C17-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
G Skill Intl F4-4133C17-8GTZR 8GB
G Skill Intl F4-4133C17-8GTZR 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMK8GX4M1A2666C16 8GB
Corsair CMK8GX4M1A2666C16 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston MSI26D4S9S8HJ-8 8GB
Kingston MSI26D4S9S8HJ-8 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Kingston 9905624-016.A00G 8GB
Kingston 9905624-016.A00G 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Corsair CMSO4GX4M1A2133C15 4GB
Corsair CMSO4GX4M1A2133C15 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 99U5704-001.A00G 4GB
Kingston 99U5704-001.A00G 4GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
Crucial Technology BL8G36C16U4W.M8FE1 8GB
内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Corsair CMR128GX4M8X3800C19 16GB
Corsair CMR128GX4M8X3800C19 16GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Kingston KF3200C18D4/8G 8GB
Kingston KF3200C18D4/8G 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
内存RAM