Kingmax Semiconductor KLDD48F-B8KU5 1GB vs Micron Technology 36ASF4G72LZ-2G3B1 32GB

总分

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分

Micron Technology 36ASF4G72LZ-2G3B1 32GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

差异规格评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB

需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB

报告一个错误

更快的读取速度，GB/s

3 11.2

测试中的平均数值

Micron Technology 36ASF4G72LZ-2G3B1 32GB

需要考虑的原因
Micron Technology 36ASF4G72LZ-2G3B1 32GB

报告一个错误

低于PassMark测试中的延时，ns

34 61

左右 -79% 更低的延时
更快的写入速度，GB/s

7.6 1,670.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Micron Technology 36ASF4G72LZ-2G3B1 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 34
读取速度，GB/s

3,529.3 11.2
写入速度，GB/s

1,670.4 7.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

517 2245

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SF564128CJ8N6NNSEG 4GB

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Corsair CMV8GX4M1L2400C16 8GB

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Crucial Technology CT102464BF160B.C16 8GB

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Kllisre M471A1K43CB1-CTD 8GB

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Kingston 9905471-002.A00LF 2GB

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Apacer Technology 76.D105G.D090B 16GB

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Crucial Technology CT4G4DFS8266.C8FF 4GB

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Kingston KVT8FP-HYC 4GB

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Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Kingston 9905624-016.A00G 8GB

Kingston 9905624-016.A00G 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Mushkin MR[A/B]4U320LLLM16G 16GB

Mushkin MR[A/B]4U320LLLM16G 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-2400C16-4GRS 4GB

G Skill Intl F4-2400C16-4GRS 4GB