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Kingmax Semiconductor KLDE88F-B8MO5 2GB
G Skill Intl F4-2800C16-4GRR 4GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB vs G Skill Intl F4-2800C16-4GRR 4GB

总分
star star star star star
Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

总分
star star star star star
G Skill Intl F4-2800C16-4GRR 4GB

G Skill Intl F4-2800C16-4GRR 4GB

差异 规格 评论

差异

Kingmax Semiconductor KLDE88F-B8MO5 2GB 需要考虑的原因
Kingmax Semiconductor KLDE88F-B8MO5 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,254.2 left arrow 12.2
    测试中的平均数值
G Skill Intl F4-2800C16-4GRR 4GB 需要考虑的原因
G Skill Intl F4-2800C16-4GRR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 53
    左右 -112% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor KLDE88F-B8MO5 2GB
G Skill Intl F4-2800C16-4GRR 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 25
  • 读取速度，GB/s
    4,753.1 left arrow 15.7
  • 写入速度，GB/s
    2,254.2 left arrow 12.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    776 left arrow 2871

Kingmax Semiconductor KLDE88F-B8MO5 2GB RAM的比较

Kingston KVR800D2N6/2G 2GB
Corsair CMT64GX4M8C3200C16 8GB

G Skill Intl F4-2800C16-4GRR 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Peak Electronics 256X64M-67E 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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A-DATA Technology ADOVE1A0834E 1GB
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G Skill Intl F4-3200C14-16GTZDCB 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Corsair CMK8GX4M2A2400C16 4GB
Corsair CMK8GX4M2A2400C16 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
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Samsung DDR3 8GB 1600MHz 8GB
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Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMK256GX4M8A2400C16 32GB
Corsair CMK256GX4M8A2400C16 32GB
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Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
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Corsair CMSX32GX4M2A2933C19 16GB
内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology CT8G4SFRA266.C8FD1 8GB
内存RAM
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Samsung M378B5773DH0-CH9 2GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
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Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
Samsung M471B1G73BH0-CH9 8GB
Samsung M471B1G73BH0-CH9 8GB
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Panram International Corporation M424016 4GB
内存RAM
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Kingston ACR512X64D3S13C9G 4GB
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Patriot Memory (PDP Systems) PSD44G240081 4GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
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