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Kingston 1G-SODIMM 1GB
Kingston 1G-SODIMM 1GB
比较
Kingston 1G-SODIMM 1GB vs Kingston 1G-SODIMM 1GB
总分
Kingston 1G-SODIMM 1GB
总分
Kingston 1G-SODIMM 1GB
差异
规格
评论
差异
需要考虑的原因
Kingston 1G-SODIMM 1GB
报告一个错误
需要考虑的原因
Kingston 1G-SODIMM 1GB
报告一个错误
规格
完整的技术规格清单
Kingston 1G-SODIMM 1GB
Kingston 1G-SODIMM 1GB
主要特点
存储器类型
DDR2
DDR2
PassMark中的延时,ns
108
108
读取速度,GB/s
1,255.1
1,255.1
写入速度,GB/s
465.1
465.1
内存带宽,mbps
5300
5300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度
5-5-5-15 / 667 MHz
5-5-5-15 / 667 MHz
排名PassMark (越多越好)
189
189
Kingston 1G-SODIMM 1GB RAM的比较
Samsung M471A4G43AB1-CWE 32GB
Kingston 1G-SODIMM 1GB RAM的比较
Samsung M471A4G43AB1-CWE 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-444.A00LF 4GB
Patriot Memory (PDP Systems) PSD44G213382 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMW16GX4M1Z3600C18 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA851S6DJR6N-VK 4GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4SFRA32A.C8FE 16GB
Apacer Technology 78.01GA0.9K5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
Kingston 1G-SODIMM 1GB
Kingston 1G-SODIMM 1GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905744-023.A00G 16GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT8G4DFS8266.C8FD1 8GB
Samsung M471B5173DB0-YK0 4GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-4GFT 4GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3000C16-16GTZN 16GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BL16G36C16U4R.M8FB1 16GB
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