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Kingston 9905316-106.A02LF 1GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Kingston 9905316-106.A02LF 1GB vs Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

总分
star star star star star
Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

差异 规格 评论

差异

Kingston 9905316-106.A02LF 1GB 需要考虑的原因
Kingston 9905316-106.A02LF 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,475.5 left arrow 13.5
    测试中的平均数值
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 56
    左右 -133% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 8800
    左右 1.93 更高的带宽

规格

完整的技术规格清单
Kingston 9905316-106.A02LF 1GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 24
  • 读取速度，GB/s
    4,878.3 left arrow 17.0
  • 写入速度，GB/s
    2,475.5 left arrow 13.5
  • 内存带宽，mbps
    8800 left arrow 17000
Other
  • 描述
    PC2-8800, SSTL 1.8V, CAS Supported: 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    598 left arrow 2703

Kingston 9905316-106.A02LF 1GB RAM的比较

Elpida EBE11UD8AJWA-6E-E 1GB
G Skill Intl F4-4200C19-4GTZ 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Kingston 9905624-010.A00G 4GB
Kingston 9905624-010.A00G 4GB
内存RAM
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Samsung M3 78T2863QZS-CF7 1GB
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内存RAM
Kingston 9965525-144.A00LF 8GB
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Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Neo Forza NMUD480E86-3200 8GB
Neo Forza NMUD480E86-3200 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
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Corsair CMD16GX4M2K4133C19 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Patriot Memory (PDP Systems) PSD432G32002S 32GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
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Kingston 99U5713-002.A00G 4GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
内存RAM
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
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Corsair CMK32GX4M2Z3600C18 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
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Kingston 9905744-066.A00G 32GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C16-16GVS 16GB
G Skill Intl F4-3200C16-16GVS 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Corsair CMSO32GX4M2A2133C15 16GB
内存RAM
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Kingston 99P5474-037.A00LF 4GB
SK Hynix GKE800UD102408-2400 8GB
SK Hynix GKE800UD102408-2400 8GB
内存RAM