Kingston 9905316-106.A02LF 1GB vs G Skill Intl F4-3600C16-8GTRS 8GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

G Skill Intl F4-3600C16-8GTRS 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 20.3

测试中的平均数值
更快的写入速度，GB/s

2,475.5 18.1

测试中的平均数值

G Skill Intl F4-3600C16-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 56

左右 -143% 更低的延时
更高的内存带宽，mbps

17000 8800

左右 1.93 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

G Skill Intl F4-3600C16-8GTRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 23
读取速度，GB/s

4,878.3 20.3
写入速度，GB/s

2,475.5 18.1
内存带宽，mbps

8800 17000

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

598 4173

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CH9 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-2933C16-16GTZRX 16GB

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Kingston 9905624-023.A00G 8GB

Kingston 9965516-112.A00LF 16GB

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Essencore Limited KD4AGU880-36A180X 16GB

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Kingston 9905471-001.A01LF 2GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Patriot Memory (PDP Systems) PSD44G266641 4GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMK16GX4M2L3200C16 8GB

Corsair CMK16GX4M2L3200C16 8GB

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB