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Kingston 9905316-106.A02LF 1GB
Kingston HX424C15PB/4 4GB
比较
Kingston 9905316-106.A02LF 1GB vs Kingston HX424C15PB/4 4GB
总分
Kingston 9905316-106.A02LF 1GB
总分
Kingston HX424C15PB/4 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905316-106.A02LF 1GB
报告一个错误
低于PassMark测试中的延时,ns
56
68
左右 18% 更低的延时
更快的读取速度,GB/s
4
15.5
测试中的平均数值
需要考虑的原因
Kingston HX424C15PB/4 4GB
报告一个错误
更快的写入速度,GB/s
6.9
2,475.5
测试中的平均数值
更高的内存带宽,mbps
19200
8800
左右 2.18 更高的带宽
规格
完整的技术规格清单
Kingston 9905316-106.A02LF 1GB
Kingston HX424C15PB/4 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
56
68
读取速度,GB/s
4,878.3
15.5
写入速度,GB/s
2,475.5
6.9
内存带宽,mbps
8800
19200
Other
描述
PC2-8800, SSTL 1.8V, CAS Supported: 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
598
1310
Kingston 9905316-106.A02LF 1GB RAM的比较
Elpida EBE11UD8AJWA-6E-E 1GB
G Skill Intl F4-4200C19-4GTZ 4GB
Kingston HX424C15PB/4 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905316-106.A02LF 1GB
Kingston HX424C15PB/4 4GB
Transcend Information JM3200HSE-32G 32GB
Samsung M471A2G43AB2-CWE 16GB
SK Hynix HYMP125S64CP8-S6 2GB
Kingston 9905678-033.A00G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Essencore Limited KD48GS88C-32N2200 8GB
Kingston 99U5429-007.A00LF 2GB
Gold Key Technology Co Ltd NMUD480E84-3000D 8GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
Kingston 99P5474-037.A00LF 4GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Kingston 9905403-437.A01LF 4GB
Crucial Technology CB16GU2666.C8ET 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Crucial Technology CT8G4SFS824A.M8FA 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Samsung M471A2K43CB1-CRCR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4600C18-8GTZR 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology DDR4 4133 2OZ 8GB
报告一个错误
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Bug description
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