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Kingston 9905316-106.A02LF 1GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB

Kingston 9905316-106.A02LF 1GB vs Micron Technology 16ATF2G64AZ-2G3B1 16GB

总分
star star star star star
Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分
star star star star star
Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

差异 规格 评论

差异

Kingston 9905316-106.A02LF 1GB 需要考虑的原因
Kingston 9905316-106.A02LF 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,475.5 left arrow 10.4
    测试中的平均数值
Micron Technology 16ATF2G64AZ-2G3B1 16GB 需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3B1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 56
    左右 -60% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 8800
    左右 2.18 更高的带宽

规格

完整的技术规格清单
Kingston 9905316-106.A02LF 1GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 35
  • 读取速度，GB/s
    4,878.3 left arrow 15.0
  • 写入速度，GB/s
    2,475.5 left arrow 10.4
  • 内存带宽，mbps
    8800 left arrow 19200
Other
  • 描述
    PC2-8800, SSTL 1.8V, CAS Supported: 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    no data left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    598 left arrow 2672

Kingston 9905316-106.A02LF 1GB RAM的比较

Elpida EBE11UD8AJWA-6E-E 1GB
G Skill Intl F4-4200C19-4GTZ 4GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Kingston KHX2666C16/8G 8GB
Kingston KHX2666C16/8G 8GB
内存RAM
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMK32GX5M2B5600C36 16GB
Corsair CMV8GX4M1A2133C15 8GB
Corsair CMV8GX4M1A2133C15 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Corsair CMK64GX4M4K3733C17 16GB
Corsair CMK64GX4M4K3733C17 16GB
内存RAM
Kingston 9905403-500.A01LF 8GB
Kingston 9905403-500.A01LF 8GB
Essencore Limited IM44GU48N26-FFFHM 4GB
Essencore Limited IM44GU48N26-FFFHM 4GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
G Skill Intl F4-3333C16-16GTZSW 16GB
G Skill Intl F4-3333C16-16GTZSW 16GB
内存RAM
Kingston KHX4000C19D4/8GX 8GB
Kingston KHX4000C19D4/8GX 8GB
Kingston KHX2666C16/8G 8GB
Kingston KHX2666C16/8G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK16GX4M1A2666C16 16GB
Corsair CMK16GX4M1A2666C16 16GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Kingston KHX3466C19D4/8G 8GB
Kingston KHX3466C19D4/8G 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663FB3-CF7 2GB
Samsung M3 78T5663FB3-CF7 2GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
Micron Technology AFLD48EH1P 8GB
Micron Technology AFLD48EH1P 8GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
内存RAM