Kingston 9905316-106.A02LF 1GB vs Samsung M471A5244CB0-CWE 4GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值
更快的写入速度，GB/s

2,475.5 12.0

测试中的平均数值

Samsung M471A5244CB0-CWE 4GB

需要考虑的原因
Samsung M471A5244CB0-CWE 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 56

左右 -47% 更低的延时
更高的内存带宽，mbps

25600 8800

左右 2.91 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

Samsung M471A5244CB0-CWE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 38
读取速度，GB/s

4,878.3 15.5
写入速度，GB/s

2,475.5 12.0
内存带宽，mbps

8800 25600

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

598 2283

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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