Kingston 9905316-106.A02LF 1GB vs SK Hynix HMA451R7MFR8N-TF 4GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

SK Hynix HMA451R7MFR8N-TF 4GB

SK Hynix HMA451R7MFR8N-TF 4GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 10.4

测试中的平均数值

SK Hynix HMA451R7MFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451R7MFR8N-TF 4GB

报告一个错误

低于PassMark测试中的延时，ns

53 56

左右 -6% 更低的延时
更快的写入速度，GB/s

8.6 2,475.5

测试中的平均数值
更高的内存带宽，mbps

17000 8800

左右 1.93 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

SK Hynix HMA451R7MFR8N-TF 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 53
读取速度，GB/s

4,878.3 10.4
写入速度，GB/s

2,475.5 8.6
内存带宽，mbps

8800 17000

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

598 2285

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3000C16-8GSXWB 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Kingston KVT8FP-HYC 4GB

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Corsair CMSX4GX3M1A1600C9 4GB

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G Skill Intl F4-3600C16-8GTRGC 8GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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G Skill Intl F4-2933C14-16GTZRX 16GB

G Skill Intl F4-2933C14-16GTZRX 16GB

Samsung M471B5673FH0-CF8 2GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

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Kingston 9965662-016.A00G 16GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB