Kingston 9905403-003.B00LF 4GB vs SK Hynix HMA451R7AFR8N-TF 4GB

总分

Kingston 9905403-003.B00LF 4GB

Kingston 9905403-003.B00LF 4GB

总分

SK Hynix HMA451R7AFR8N-TF 4GB

SK Hynix HMA451R7AFR8N-TF 4GB

差异规格评论

差异

Kingston 9905403-003.B00LF 4GB

需要考虑的原因
Kingston 9905403-003.B00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 59

左右 54% 更低的延时
更快的读取速度，GB/s

14 9

测试中的平均数值
更快的写入速度，GB/s

9.4 7.6

测试中的平均数值

SK Hynix HMA451R7AFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451R7AFR8N-TF 4GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-003.B00LF 4GB

SK Hynix HMA451R7AFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 59
读取速度，GB/s

14.0 9.0
写入速度，GB/s

9.4 7.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2342 2128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-2400C16-8GRS 8GB

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Wilk Elektronik S.A. IRXS2666D464L16S/8G 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

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Samsung M3 78T3354BZ0-CCC 256MB

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TwinMOS 9DNPBNZB-TATP 4GB

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Crucial Technology CT16G4SFD8266.M16FH 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston 9965525-144.A00LF 8GB

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G Skill Intl F4-3600C16-8GTZNC 8GB

G Skill Intl F4-3600C16-8GTZNC 8GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

Samsung M471A5244CB0-CWE 4GB

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Kingmax Semiconductor GLAG42F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston KF548C38-16 16GB

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Micron Technology 36ASF2G72PZ-2G4AT 16GB

Micron Technology 36ASF2G72PZ-2G4AT 16GB