Kingston 9905403-090.A01LF 4GB vs Corsair CMG16GX4M2E3200C16 8GB

总分

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

总分

Corsair CMG16GX4M2E3200C16 8GB

Corsair CMG16GX4M2E3200C16 8GB

差异规格评论

差异

Kingston 9905403-090.A01LF 4GB

需要考虑的原因
Kingston 9905403-090.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Corsair CMG16GX4M2E3200C16 8GB

需要考虑的原因
Corsair CMG16GX4M2E3200C16 8GB

报告一个错误

更快的读取速度，GB/s

19.9 13.9

测试中的平均数值
更快的写入速度，GB/s

14.5 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-090.A01LF 4GB

Corsair CMG16GX4M2E3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.9 19.9
写入速度，GB/s

8.9 14.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2418 3357

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M4A2666C16 4GB

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Samsung M4 70T5663CZ3-CE6 2GB

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Kingston 9905625-066.A00G 16GB

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Kingston 9905471-076.A00LF 8GB

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SK Hynix HMA41GU6AFR8N-TF 8GB

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Nanya Technology NT8GA64D88AX3S-HR 8GB

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Team Group Inc. Vulcan-1600 4GB

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Apacer Technology 78.C2GFK.AR20B 8GB

Apacer Technology 78.C2GFK.AR20B 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB

Micron Technology 16ATF1G64AZ-2G1A2 8GB