Kingston 9905403-090.A01LF 4GB vs Hyundai Inc AR32C16S8K2HU416R 8GB

总分

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

总分

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

差异规格评论

差异

Kingston 9905403-090.A01LF 4GB

需要考虑的原因
Kingston 9905403-090.A01LF 4GB

报告一个错误

Hyundai Inc AR32C16S8K2HU416R 8GB

需要考虑的原因
Hyundai Inc AR32C16S8K2HU416R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 -35% 更低的延时
更快的读取速度，GB/s

19 13.9

测试中的平均数值
更快的写入速度，GB/s

15.1 8.9

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-090.A01LF 4GB

Hyundai Inc AR32C16S8K2HU416R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 20
读取速度，GB/s

13.9 19.0
写入速度，GB/s

8.9 15.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2418 3410

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M4 70T2864QZ3-CE6 1GB

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Kingston 9905403-090.A01LF 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Micron Technology 16G3200CL22 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

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Thermaltake Technology Co Ltd R009D408GX2-3000C16B 8GB