RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston 9905403-090.A01LF 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
比较
Kingston 9905403-090.A01LF 4GB vs Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
总分
Kingston 9905403-090.A01LF 4GB
总分
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-090.A01LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
74
左右 64% 更低的延时
更快的读取速度,GB/s
13.9
13.8
测试中的平均数值
更快的写入速度,GB/s
8.9
7.9
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
报告一个错误
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-090.A01LF 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
74
读取速度,GB/s
13.9
13.8
写入速度,GB/s
8.9
7.9
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2418
1825
Kingston 9905403-090.A01LF 4GB RAM的比较
Samsung M386B4G70DM0-YK03 32GB
Kingston K531R8-ETF 4GB
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA84GL7AMR4N-UH 32GB
Avant Technology F641GU67F9333G 8GB
Corsair CMV8GX4M1A2666C18 8GB
SK Hynix HMT41GS6AFR8A-PB 8GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
Crucial Technology CT25664BA160B.C16F 2GB
G Skill Intl F4-4000C19-16GTRS 16GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KF2666C16D4/16G 16GB
Hexon Technology Pte Ltd HEXON 1GB
Chun Well Technology Holding Limited CL19-19-19 D4-2666
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Transcend Information JM2666HSB-16G 16GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD832A.C16FJ 16GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Essencore Limited IM48GU88N26-GIIHA0 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4SFS824A.C8FP 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Gloway International (HK) STK4U2400D15082C 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLS8G4S26BFSD.16FD2 8GB
报告一个错误
×
Bug description
Source link