Kingston 9905403-134.A00LF 2GB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

总分

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

总分

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

差异规格评论

差异

Kingston 9905403-134.A00LF 2GB

需要考虑的原因
Kingston 9905403-134.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

24 52

左右 54% 更低的延时

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

需要考虑的原因
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

报告一个错误

更快的读取速度，GB/s

20.5 15.5

测试中的平均数值
更快的写入速度，GB/s

10.1 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-134.A00LF 2GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

24 52
读取速度，GB/s

15.5 20.5
写入速度，GB/s

9.3 10.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2402 2472

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G32C16U4R.M8FE 8GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

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SK Hynix HMA84GL7AFR4N-UH 32GB

Crucial Technology CT51264BD1339.M16F 4GB

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HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB