Kingston 9905403-149.A01LF 4GB vs AMD R744G2606U1S 4GB

总分

Kingston 9905403-149.A01LF 4GB

Kingston 9905403-149.A01LF 4GB

总分

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

差异规格评论

差异

Kingston 9905403-149.A01LF 4GB

需要考虑的原因
Kingston 9905403-149.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 76

左右 67% 更低的延时
更快的写入速度，GB/s

9.4 8.7

测试中的平均数值

AMD R744G2606U1S 4GB

需要考虑的原因
AMD R744G2606U1S 4GB

报告一个错误

更快的读取速度，GB/s

15.7 14.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-149.A01LF 4GB

AMD R744G2606U1S 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 76
读取速度，GB/s

14.2 15.7
写入速度，GB/s

9.4 8.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905403-149.A01LF 4GB

Kingston 9905403-149.A01LF 4GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Kingston 9905712-001.B00G 16GB

Kingston 9905712-001.B00G 16GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Kingston 9965589-008.D01G 8GB

Kingston 9965589-008.D01G 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingston 9905704-007.A00G 4GB

Kingston 9905704-007.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Essencore Limited IM4AGU88N24-FFFHA0 16GB

Essencore Limited IM4AGU88N24-FFFHA0 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Corsair CM4X16GC3200C16K2 16GB

Corsair CM4X16GC3200C16K2 16GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Corsair CMSX32GX4M2A2666C18 16GB

Corsair CMSX32GX4M2A2666C18 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

Smart Modular SF464128CKHIWDFSEG 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

DSL Memory CIR-W4SUSS2408G 8GB

DSL Memory CIR-W4SUSS2408G 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB