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Kingston 9905403-434.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FE 16GB

Kingston 9905403-434.A00LF 4GB vs Crucial Technology CT16G4DFD824A.C16FE 16GB

总分
star star star star star
Kingston 9905403-434.A00LF 4GB

Kingston 9905403-434.A00LF 4GB

总分
star star star star star
Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

差异 规格 评论

差异

Kingston 9905403-434.A00LF 4GB 需要考虑的原因
Kingston 9905403-434.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 34
    左右 26% 更低的延时
Crucial Technology CT16G4DFD824A.C16FE 16GB 需要考虑的原因
Crucial Technology CT16G4DFD824A.C16FE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    14.9 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.4 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-434.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 34
  • 读取速度，GB/s
    12.4 left arrow 14.9
  • 写入速度，GB/s
    8.4 left arrow 11.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2157 left arrow 2831

Kingston 9905403-434.A00LF 4GB RAM的比较

A-DATA Technology AD5U480016G-B 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology CT16G4DFD824A.C16FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston ACR24D4S7D8MB-16 16GB
内存RAM
Kingston KVR26N19D8/16 16GB
Kingston KVR26N19D8/16 16GB
Kingston ACR24D4S7S8MB-8 8GB
Kingston ACR24D4S7S8MB-8 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMW64GX4M8C3000C15 8GB
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A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
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G Skill Intl F4-4000C19-4GTZ 4GB
内存RAM
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Kingston ACR32D4U2S8HD-8X 8GB
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Avant Technology W6451U66J7240ND 4GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
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内存RAM
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Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Crucial Technology CT16G4SFRA266.C8FE 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Samsung M393A2K40BB2-CTD 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
Samsung M378A1K43BB2-CTD 8GB
Samsung M378A1K43BB2-CTD 8GB
内存RAM
Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
内存RAM