Kingston 9905403-437.A01LF 4GB vs Corsair CMR16GX4M2D3200C16 8GB

总分

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

总分

Corsair CMR16GX4M2D3200C16 8GB

Corsair CMR16GX4M2D3200C16 8GB

差异规格评论

差异

Kingston 9905403-437.A01LF 4GB

需要考虑的原因
Kingston 9905403-437.A01LF 4GB

报告一个错误

Corsair CMR16GX4M2D3200C16 8GB

需要考虑的原因
Corsair CMR16GX4M2D3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 -50% 更低的延时
更快的读取速度，GB/s

18.9 13

测试中的平均数值
更快的写入速度，GB/s

14.0 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-437.A01LF 4GB

Corsair CMR16GX4M2D3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 26
读取速度，GB/s

13.0 18.9
写入速度，GB/s

8.6 14.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2201 3456

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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OCZ OCZ3G2000LV2G 2GB

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Smart Modular SF564128CJ8N6NNSEG 4GB

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

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Patriot Memory (PDP Systems) 2666 C16 Series 8GB

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