Kingston 9905403-437.A01LF 4GB vs G Skill Intl F4-2400C15-4GNT 4GB

总分

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

总分

G Skill Intl F4-2400C15-4GNT 4GB

G Skill Intl F4-2400C15-4GNT 4GB

差异规格评论

差异

Kingston 9905403-437.A01LF 4GB

需要考虑的原因
Kingston 9905403-437.A01LF 4GB

报告一个错误

G Skill Intl F4-2400C15-4GNT 4GB

需要考虑的原因
G Skill Intl F4-2400C15-4GNT 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 39

左右 -5% 更低的延时
更快的读取速度，GB/s

15.1 13

测试中的平均数值
更快的写入速度，GB/s

11.2 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-437.A01LF 4GB

G Skill Intl F4-2400C15-4GNT 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 37
读取速度，GB/s

13.0 15.1
写入速度，GB/s

8.6 11.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2201 2824

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M471A5143EB1-CRC 4GB

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Corsair CMY8GX3M2A2666C10 4GB

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A-DATA Technology VDQVE1B16 2GB

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Patriot Memory (PDP Systems) PSD48G266681 8GB

Patriot Memory (PDP Systems) PSD48G266681 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB