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Kingston 9905403-444.A00LF 4GB
Crucial Technology BL51264BA1339.16FD 4GB

Kingston 9905403-444.A00LF 4GB vs Crucial Technology BL51264BA1339.16FD 4GB

总分
star star star star star
Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分
star star star star star
Crucial Technology BL51264BA1339.16FD 4GB

Crucial Technology BL51264BA1339.16FD 4GB

差异 规格 评论

差异

Kingston 9905403-444.A00LF 4GB 需要考虑的原因
Kingston 9905403-444.A00LF 4GB
报告一个错误
Crucial Technology BL51264BA1339.16FD 4GB 需要考虑的原因
Crucial Technology BL51264BA1339.16FD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 35
    左右 -40% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 6.5
    测试中的平均数值

规格

完整的技术规格清单
Kingston 9905403-444.A00LF 4GB
Crucial Technology BL51264BA1339.16FD 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    35 left arrow 25
  • 读取速度，GB/s
    11.5 left arrow 13.8
  • 写入速度，GB/s
    6.5 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1994 left arrow 2300

Kingston 9905403-444.A00LF 4GB RAM的比较

Samsung M378B5273BH1-CH9 4GB
Corsair CMZ32GX3M4A1866C10 8GB

Crucial Technology BL51264BA1339.16FD 4GB RAM的比较

Essencore Limited KD48GS88C-32N2200 8GB
Corsair CMK32GX4M2D3600C16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9965525-018.A00LF 4GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
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Crucial Technology BL51264BA1339.16FD 4GB
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Samsung M3 78T5663RZ3-CF7 2GB
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Team Group Inc. ZEUS-2133 8GB
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Kingston 99U5469-045.A00LF 4GB
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内存RAM
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Micron Technology 16JTF51264HZ-1G6M1 4GB
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Samsung M471A2K43DB1-CTD 16GB
内存RAM
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内存RAM
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Elpida EBJ40EG8BFWB-JS-F 4GB
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内存RAM
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内存RAM