Kingston 9905403-444.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Kingston 9905403-444.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

总分

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

差异规格评论

差异

Kingston 9905403-444.A00LF 4GB

需要考虑的原因
Kingston 9905403-444.A00LF 4GB

报告一个错误

更快的读取速度，GB/s

11.5 9.8

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

报告一个错误

更快的写入速度，GB/s

7.9 6.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-444.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 35
读取速度，GB/s

11.5 9.8
写入速度，GB/s

6.5 7.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1994 2126

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 72ASS4G72LZ-2G1A1 32GB

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Samsung M378B5173BH0-CH9 4GB

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Samsung V-GeN D4S16GL32A8TS 16GB

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Corsair VS2GB1333D4 2GB

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Samsung M386A8K40CM2-CRC 64GB

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Micron Technology 8ATF51264HZ-2G1A2 4GB

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Corsair CMK16GX4M2K4133C19 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-4400C19-32GTRS 32GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

A-DATA Technology DDR4 3000 8GB

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Samsung M391B5673EH1-CH9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N