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Kingston 9905403-444.A00LF 4GB
Kingston 9905678-028.A00G 8GB

Kingston 9905403-444.A00LF 4GB vs Kingston 9905678-028.A00G 8GB

总分
star star star star star
Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分
star star star star star
Kingston 9905678-028.A00G 8GB

Kingston 9905678-028.A00G 8GB

差异 规格 评论

差异

Kingston 9905403-444.A00LF 4GB 需要考虑的原因
Kingston 9905403-444.A00LF 4GB
报告一个错误
Kingston 9905678-028.A00G 8GB 需要考虑的原因
Kingston 9905678-028.A00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 35
    左右 -46% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 6.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-444.A00LF 4GB
Kingston 9905678-028.A00G 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 24
  • 读取速度，GB/s
    11.5 left arrow 15.9
  • 写入速度，GB/s
    6.5 left arrow 10.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1994 left arrow 2725

Kingston 9905403-444.A00LF 4GB RAM的比较

Samsung M378B5273BH1-CH9 4GB
Corsair CMZ32GX3M4A1866C10 8GB

Kingston 9905678-028.A00G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston 9905678-028.A00G 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393A2K43BB1-CPB 16GB
Samsung M393A2K43BB1-CPB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
内存RAM
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内存RAM
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Corsair CMSO4GX3M1A1333C9 4GB
内存RAM