Kingston 9905403-444.A00LF 4GB vs Kingston KF2666C15S4/16G 16GB

总分

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分

Kingston KF2666C15S4/16G 16GB

Kingston KF2666C15S4/16G 16GB

差异规格评论

差异

Kingston 9905403-444.A00LF 4GB

需要考虑的原因
Kingston 9905403-444.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 37

左右 5% 更低的延时

Kingston KF2666C15S4/16G 16GB

需要考虑的原因
Kingston KF2666C15S4/16G 16GB

报告一个错误

更快的读取速度，GB/s

16.4 11.5

测试中的平均数值
更快的写入速度，GB/s

14.0 6.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-444.A00LF 4GB

Kingston KF2666C15S4/16G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 37
读取速度，GB/s

11.5 16.4
写入速度，GB/s

6.5 14.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1994 3131

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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V-GEN D4H8GS24A8 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Micron Technology 8ATF1G64HZ-2G3A1 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

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Kingston KHX2133C13S4/8G 8GB

Kingston 99P5471-002.A00LF 2GB

Kingston 99P5471-002.A00LF 2GB

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G Skill Intl F4-3600C18-32GTZR 32GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT16G4DFD824A.C16FBR 16GB

Crucial Technology CT16G4DFD824A.C16FBR 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Corsair CMK16GX4M2Z3466C16 8GB

Corsair CMK16GX4M2Z3466C16 8GB