Kingston 9905403-444.A00LF 4GB vs Samsung 18ASF1G72PDZ-2G1B1 16GB

总分

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分

Samsung 18ASF1G72PDZ-2G1B1 16GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

差异规格评论

差异

Kingston 9905403-444.A00LF 4GB

需要考虑的原因
Kingston 9905403-444.A00LF 4GB

报告一个错误

更快的读取速度，GB/s

11.5 9.8

测试中的平均数值

Samsung 18ASF1G72PDZ-2G1B1 16GB

需要考虑的原因
Samsung 18ASF1G72PDZ-2G1B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 35

左右 -9% 更低的延时
更快的写入速度，GB/s

8.6 6.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-444.A00LF 4GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 32
读取速度，GB/s

11.5 9.8
写入速度，GB/s

6.5 8.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1994 2271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Crucial Technology BL16G36C16U4RL.M8FB1 16GB

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Mushkin MRX4U300GJJM16G 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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INTENSO M418039 8GB

INTENSO M418039 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

SK Hynix HMA82GU7AFR8N-UH 16GB

SK Hynix HMA82GU7AFR8N-UH 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

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Kingston KHX4000C19D4/8GX 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Apacer Technology GD2.1527WT.001 8GB

Apacer Technology GD2.1527WT.001 8GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB