Kingston 9905403-444.A00LF 4GB vs Samsung M378A1K43BB1-CTD 16GB

总分

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分

Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB

差异规格评论

差异

Kingston 9905403-444.A00LF 4GB

需要考虑的原因
Kingston 9905403-444.A00LF 4GB

报告一个错误

Samsung M378A1K43BB1-CTD 16GB

需要考虑的原因
Samsung M378A1K43BB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 35

左右 -13% 更低的延时
更快的读取速度，GB/s

17.3 11.5

测试中的平均数值
更快的写入速度，GB/s

13.4 6.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-444.A00LF 4GB

Samsung M378A1K43BB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 31
读取速度，GB/s

11.5 17.3
写入速度，GB/s

6.5 13.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1994 2762

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Wilk Elektronik S.A. GR2400D464L17S/8G 8GB

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Kingston 99U5471-012.A00LF 4GB

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Crucial Technology CT8G4DFRA32A.M8FR 8GB

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Kingston 9905403-444.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB