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Kingston 9905403-444.A00LF 4GB
Samsung M378A1K43EB2-CVF 8GB

Kingston 9905403-444.A00LF 4GB vs Samsung M378A1K43EB2-CVF 8GB

总分
star star star star star
Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分
star star star star star
Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

差异 规格 评论

差异

Kingston 9905403-444.A00LF 4GB 需要考虑的原因
Kingston 9905403-444.A00LF 4GB
报告一个错误
Samsung M378A1K43EB2-CVF 8GB 需要考虑的原因
Samsung M378A1K43EB2-CVF 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 35
    左右 -25% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 6.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    23400 left arrow 10600
    左右 2.21 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-444.A00LF 4GB
Samsung M378A1K43EB2-CVF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 28
  • 读取速度，GB/s
    11.5 left arrow 17.4
  • 写入速度，GB/s
    6.5 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 23400
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • 排名PassMark (越多越好)
    1994 left arrow 3419

Kingston 9905403-444.A00LF 4GB RAM的比较

Samsung M378B5273BH1-CH9 4GB
Corsair CMZ32GX3M4A1866C10 8GB

Samsung M378A1K43EB2-CVF 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
Crucial Technology BLS8G4D32AESBK.M8FE 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
Crucial Technology BLE16G4D32AEEA.K16FB 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Samsung M378A1K43EB2-CVF 8GB
Samsung M378A1K43EB2-CVF 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393A4K40BB0-CPB 32GB
Samsung M393A4K40BB0-CPB 32GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CM4X8GE2400C14K4 8GB
Corsair CM4X8GE2400C14K4 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
内存RAM
Samsung M378B1G73EB0-CK0 8GB
Samsung M378B1G73EB0-CK0 8GB
G Skill Intl F4-3200C14-16GFX 16GB
G Skill Intl F4-3200C14-16GFX 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-4000C18-8GTZRB 8GB
G Skill Intl F4-4000C18-8GTZRB 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
Crucial Technology CT16G4SFD824A.C16FHD 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston KTD3KX-MIB 8GB
Kingston KTD3KX-MIB 8GB
内存RAM