Kingston 9905403-447.A00LF 4GB vs Kingston KF2666C16D4/8G 8GB

总分

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

总分

Kingston KF2666C16D4/8G 8GB

Kingston KF2666C16D4/8G 8GB

差异规格评论

差异

Kingston 9905403-447.A00LF 4GB

需要考虑的原因
Kingston 9905403-447.A00LF 4GB

报告一个错误

Kingston KF2666C16D4/8G 8GB

需要考虑的原因
Kingston KF2666C16D4/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 36

左右 -13% 更低的延时
更快的读取速度，GB/s

16.1 13.7

测试中的平均数值
更快的写入速度，GB/s

12.9 8.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-447.A00LF 4GB

Kingston KF2666C16D4/8G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 32
读取速度，GB/s

13.7 16.1
写入速度，GB/s

8.2 12.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2208 3101

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Nanya Technology NT1GT64U8HB0BN-3C 1GB

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Micron Technology 8ATF1G64AZ-3G2R1 8GB

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Crucial Technology BLE8G4D26AFEA.16FBD 8GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

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G Skill Intl F4-3600C18-32GTZR 32GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Team Group Inc. Team-Elite-2400 4GB

Team Group Inc. Team-Elite-2400 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

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Corsair CMD16GX4M4B3400C16 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB