Kingston 9905403-447.A00LF 4GB vs Samsung M393A5143DB0-CPB 4GB

总分

Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

总分

Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

差异规格评论

差异

Kingston 9905403-447.A00LF 4GB

需要考虑的原因
Kingston 9905403-447.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 54

左右 33% 更低的延时
更快的读取速度，GB/s

13.7 10.4

测试中的平均数值

Samsung M393A5143DB0-CPB 4GB

需要考虑的原因
Samsung M393A5143DB0-CPB 4GB

报告一个错误

更快的写入速度，GB/s

8.5 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-447.A00LF 4GB

Samsung M393A5143DB0-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 54
读取速度，GB/s

13.7 10.4
写入速度，GB/s

8.2 8.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 2226

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

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Kingston 9905458-017.A01LF 4GB

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Micron Technology 18ASF1G72PZ-2G3B1 8GB

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SK Hynix HMA81GU7AFR8N-UH 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB