Kingston 9905403-515.A00LF 8GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

总分

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

总分

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

差异规格评论

差异

Kingston 9905403-515.A00LF 8GB

需要考虑的原因
Kingston 9905403-515.A00LF 8GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

17 13

测试中的平均数值
更快的写入速度，GB/s

12.9 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-515.A00LF 8GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

13.0 17.0
写入速度，GB/s

9.0 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2489 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PUSKILL DDR3 1600 8G 8GB

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Corsair CMSO8GX4M1A2133C15 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Hewlett-Packard 7EH68AA# 16GB

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Samsung M471B5773DH0-CH9 2GB

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Crucial Technology CT4G4DFS824A.C8FHP 4GB

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A-DATA Technology DOVF1B163G2G 2GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

ASint Technology SLA302G08-GGNHC 4GB

ASint Technology SLA302G08-GGNHC 4GB

G Skill Intl F3-2400C10-8GTX 8GB

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Corsair CM2X2048-6400C5 2GB

Corsair CM2X2048-6400C5 2GB

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Kingston 9905665-017.A00G 4GB

Kingston 9905665-017.A00G 4GB