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Kingston 9905458-017.A01LF 4GB
A-DATA Technology DDR4 4133 2OZ 8GB
比较
Kingston 9905458-017.A01LF 4GB vs A-DATA Technology DDR4 4133 2OZ 8GB
总分
Kingston 9905458-017.A01LF 4GB
总分
A-DATA Technology DDR4 4133 2OZ 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905458-017.A01LF 4GB
报告一个错误
需要考虑的原因
A-DATA Technology DDR4 4133 2OZ 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
25
左右 -9% 更低的延时
更快的读取速度,GB/s
18.5
12.8
测试中的平均数值
更快的写入速度,GB/s
17.8
8.6
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston 9905458-017.A01LF 4GB
A-DATA Technology DDR4 4133 2OZ 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
23
读取速度,GB/s
12.8
18.5
写入速度,GB/s
8.6
17.8
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2239
3905
Kingston 9905458-017.A01LF 4GB RAM的比较
Kingston 99U5469-052.A00LF 4GB
Kingston 99U5403-185.A00LF 8GB
A-DATA Technology DDR4 4133 2OZ 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS16G4D30CEST.16FD 16GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-3200C14-8GTZKO 8GB
Kingston 9905403-038.A00LF 4GB
Corsair CMK32GX4M4A2666C15 8GB
Kingston 9965525-144.A00LF 8GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 9905702-119.A00G 8GB
Samsung M393B5270CH0-CH9 4GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Samsung M393B5270CH0-CH9 4GB
Corsair CMK16GX4M2E3200C16 8GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3600C17-8GTRG 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2800C14-16GVK 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
V-GEN D4S4GL32A16TS 4GB
Kingston 99U5403-465.A00LF 8GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3200C16-4GVK 4GB
Kingston KHX2133C11D3/4GX 4GB
Transcend Information AQD-SD4U8GE21-SG 8GB
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