Kingston 9905458-017.A01LF 4GB vs Samsung M378A1K43EB2-CVF 8GB

总分

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

总分

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

差异规格评论

差异

Kingston 9905458-017.A01LF 4GB

需要考虑的原因
Kingston 9905458-017.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时

Samsung M378A1K43EB2-CVF 8GB

需要考虑的原因
Samsung M378A1K43EB2-CVF 8GB

报告一个错误

更快的读取速度，GB/s

17.4 12.8

测试中的平均数值
更快的写入速度，GB/s

14.5 8.6

测试中的平均数值
更高的内存带宽，mbps

23400 10600

左右 2.21 更高的带宽

规格

完整的技术规格清单

Kingston 9905458-017.A01LF 4GB

Samsung M378A1K43EB2-CVF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

12.8 17.4
写入速度，GB/s

8.6 14.5
内存带宽，mbps

10600 23400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2239 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905458-017.A01LF 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB

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Crucial Technology CT8G3S186DM.C16FN 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Corsair CMWX16GC3600C18W2D 16GB