RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston 9905458-017.A01LF 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB

Kingston 9905458-017.A01LF 4GB vs Samsung V-GeN D4S8GL26A8TL5 8GB

总分
star star star star star
Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

总分
star star star star star
Samsung V-GeN D4S8GL26A8TL5 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB

差异 规格 评论

差异

Kingston 9905458-017.A01LF 4GB 需要考虑的原因
Kingston 9905458-017.A01LF 4GB
报告一个错误
Samsung V-GeN D4S8GL26A8TL5 8GB 需要考虑的原因
Samsung V-GeN D4S8GL26A8TL5 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 25
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    18 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905458-017.A01LF 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 22
  • 读取速度，GB/s
    12.8 left arrow 18.0
  • 写入速度，GB/s
    8.6 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2239 left arrow 3110

Kingston 9905458-017.A01LF 4GB RAM的比较

Kingston 99U5469-052.A00LF 4GB
Kingston 99U5403-185.A00LF 8GB

Samsung V-GeN D4S8GL26A8TL5 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Kingston X6TCK6-MIE 32GB
Kingston X6TCK6-MIE 32GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Samsung V-GeN D4S8GL26A8TL5 8GB
Samsung V-GeN D4S8GL26A8TL5 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
内存RAM
Corsair CMK16GX4M2K4266C16 8GB
Corsair CMK16GX4M2K4266C16 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Crucial Technology BL8G32C16U4B.8FE 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
G Skill Intl F4-3733C17-8GTZA 8GB
G Skill Intl F4-3733C17-8GTZA 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
内存RAM