Kingston 9905469-143.A00LF 4GB vs Samsung M471A1G44BB0-CWE 8GB

总分

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

总分

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

差异规格评论

差异

Kingston 9905469-143.A00LF 4GB

需要考虑的原因
Kingston 9905469-143.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 60

左右 55% 更低的延时

Samsung M471A1G44BB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44BB0-CWE 8GB

报告一个错误

更快的读取速度，GB/s

15.3 13.2

测试中的平均数值
更快的写入速度，GB/s

11.0 8.4

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston 9905469-143.A00LF 4GB

Samsung M471A1G44BB0-CWE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 60
读取速度，GB/s

13.2 15.3
写入速度，GB/s

8.4 11.0
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2163 2359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905469-143.A00LF 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Essencore Limited KD4AGU880-32A160U 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

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AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

Crucial Technology BLS8G4D26BFSEK.8FBD 8GB

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Wilk Elektronik S.A. IR2400D464L15S/4G 4GB