Kingston 9905469-143.A00LF 4GB vs SK Hynix HMA41GR7MFR8N-TFT1 8GB

总分

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

总分

SK Hynix HMA41GR7MFR8N-TFT1 8GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB

差异规格评论

差异

Kingston 9905469-143.A00LF 4GB

需要考虑的原因
Kingston 9905469-143.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时
更快的读取速度，GB/s

13.2 10.9

测试中的平均数值

SK Hynix HMA41GR7MFR8N-TFT1 8GB

需要考虑的原因
SK Hynix HMA41GR7MFR8N-TFT1 8GB

报告一个错误

更快的写入速度，GB/s

10.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 9905469-143.A00LF 4GB

SK Hynix HMA41GR7MFR8N-TFT1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.2 10.9
写入速度，GB/s

8.4 10.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2163 2587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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Kingston 9905598-040.A00G 16GB

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Kingston 9905403-038.A00LF 4GB

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Apacer Technology 78.DAGP2.4030B 16GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Samsung M378B5673EH1-CF8 2GB

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Kingston 99U5678-029.A00G 8GB

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Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Smart Modular SF4722G4CKHH6DFSDS 16GB

Smart Modular SF4722G4CKHH6DFSDS 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Samsung M474A2K43BB1-CRC 16GB

Samsung M474A2K43BB1-CRC 16GB

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Samsung M378A1K43EB2-CWE 8GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

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G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMD64GX4M4C3000C15 16GB

Corsair CMD64GX4M4C3000C15 16GB