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Kingston 9905469-153.A00LF 4GB
Samsung M393A2K43DB3-CWE 16GB

Kingston 9905469-153.A00LF 4GB vs Samsung M393A2K43DB3-CWE 16GB

总分
star star star star star
Kingston 9905469-153.A00LF 4GB

Kingston 9905469-153.A00LF 4GB

总分
star star star star star
Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

差异 规格 评论

差异

Kingston 9905469-153.A00LF 4GB 需要考虑的原因
Kingston 9905469-153.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 53
    左右 26% 更低的延时
  • 更快的读取速度，GB/s
    11.8 left arrow 10.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.2 left arrow 7.7
    测试中的平均数值
Samsung M393A2K43DB3-CWE 16GB 需要考虑的原因
Samsung M393A2K43DB3-CWE 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston 9905469-153.A00LF 4GB
Samsung M393A2K43DB3-CWE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 53
  • 读取速度，GB/s
    11.8 left arrow 10.3
  • 写入速度，GB/s
    8.2 left arrow 7.7
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1901 left arrow 2356

Kingston 9905469-153.A00LF 4GB RAM的比较

ASint Technology SLZ302G08-MDJHB 2GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Samsung M393A2K43DB3-CWE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
内存RAM