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Kingston 9905471-001.A01LF 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB

Kingston 9905471-001.A01LF 2GB vs Chun Well Technology Holding Limited D4U0832160B 8GB

总分
star star star star star
Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

差异 规格 评论

差异

Kingston 9905471-001.A01LF 2GB 需要考虑的原因
Kingston 9905471-001.A01LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 32
    左右 22% 更低的延时
Chun Well Technology Holding Limited D4U0832160B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0832160B 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.5 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-001.A01LF 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 32
  • 读取速度，GB/s
    12.8 left arrow 20.5
  • 写入速度，GB/s
    8.3 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1896 left arrow 3379

Kingston 9905471-001.A01LF 2GB RAM的比较

Kingston 99U5316-058.A00LF 2GB
G Skill Intl F4-2666C19-8GIS 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston MSI24D4S7S8MB-8 8GB
Kingston MSI24D4S7S8MB-8 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C16-16GTRS 16GB
G Skill Intl F4-3200C16-16GTRS 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
A-DATA Technology AO2P24HCST2-BTVS 16GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
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Kingston KP223C-ELD 2GB
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Kingston 9905678-014.A00G 4GB
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Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
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Corsair CM4B8G2J2666A15D 8GB
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Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
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AMD R748G2400U2S-UO 8GB
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3200C22-32GRS 32GB
G Skill Intl F4-3200C22-32GRS 32GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston HP26D4U9S1ME-4 4GB
Kingston HP26D4U9S1ME-4 4GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
Crucial Technology CT4G4SFS824A.C8FBD2 4GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Transcend Information TS2GSH64V4B 16GB
Transcend Information TS2GSH64V4B 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
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Kingston 9965525-155.A00LF 8GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM