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Kingston 9905471-001.A01LF 2GB
Corsair CMW16GX4M2E3200C16 8GB

Kingston 9905471-001.A01LF 2GB vs Corsair CMW16GX4M2E3200C16 8GB

总分
star star star star star
Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

总分
star star star star star
Corsair CMW16GX4M2E3200C16 8GB

Corsair CMW16GX4M2E3200C16 8GB

差异 规格 评论

差异

Kingston 9905471-001.A01LF 2GB 需要考虑的原因
Kingston 9905471-001.A01LF 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 28
    左右 11% 更低的延时
Corsair CMW16GX4M2E3200C16 8GB 需要考虑的原因
Corsair CMW16GX4M2E3200C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9905471-001.A01LF 2GB
Corsair CMW16GX4M2E3200C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 28
  • 读取速度，GB/s
    12.8 left arrow 18.0
  • 写入速度，GB/s
    8.3 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1896 left arrow 3490

Kingston 9905471-001.A01LF 2GB RAM的比较

Kingston 99U5316-058.A00LF 2GB
G Skill Intl F4-2666C19-8GIS 8GB

Corsair CMW16GX4M2E3200C16 8GB RAM的比较

SpecTek Incorporated ?????????????????? 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMW16GX4M2E3200C16 8GB
Corsair CMW16GX4M2E3200C16 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Hypertec G2RT-4AFT00 16GB
Hypertec G2RT-4AFT00 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMSX64GX4M4A2666C18 16GB
Corsair CMSX64GX4M4A2666C18 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Crucial Technology BL16G26C16U4B.16FD 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Patriot Memory (PDP Systems) PSD48G266681S 8GB
Patriot Memory (PDP Systems) PSD48G266681S 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMU16GX4M2A2666C16 8GB
Corsair CMU16GX4M2A2666C16 8GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-4266C19-32GTZR 32GB
G Skill Intl F4-4266C19-32GTZR 32GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-3200C14-16GTZN 16GB
G Skill Intl F4-3200C14-16GTZN 16GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Essencore Limited KD48GU880-36A180U 8GB
Essencore Limited KD48GU880-36A180U 8GB
内存RAM