Kingston 9905471-001.A01LF 2GB vs Kingmax Semiconductor GZNG43F-18---------- 8GB

总分

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

总分

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

差异规格评论

差异

Kingston 9905471-001.A01LF 2GB

需要考虑的原因
Kingston 9905471-001.A01LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 62

左右 60% 更低的延时

Kingmax Semiconductor GZNG43F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GZNG43F-18---------- 8GB

报告一个错误

更快的读取速度，GB/s

16.8 12.8

测试中的平均数值
更快的写入速度，GB/s

9.3 8.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-001.A01LF 2GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 62
读取速度，GB/s

12.8 16.8
写入速度，GB/s

8.3 9.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1896 2138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gloway International (HK) STK2400C15-16GB 16GB

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Corsair CMSO4GX3M1C1600C11 4GB

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Avant Technology F6451U64F9333G 4GB

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Samsung M393A1G40DB0-CPB 8GB

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Kingston 16ATF2G64AZ-2G1B1 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

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G Skill Intl F5-6000U4040E16G 16GB

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SK Hynix HYMP112S64CP6-S6 1GB

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SK Hynix HMA81GU6MFR8N-UH 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F4-3200C14-32GTRG 32GB

Corsair CMZ16GX3M2A1866C9 8GB

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Kllisre KRE-D3U1600M/8G 8GB

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Kingston 9905700-011.A00G 8GB

Kingston 9905700-011.A00G 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB

Micron Technology 4ATF1G64HZ-3G2E1 8GB