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Kingston 9905471-001.A01LF 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
比较
Kingston 9905471-001.A01LF 2GB vs OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
总分
Kingston 9905471-001.A01LF 2GB
总分
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905471-001.A01LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
25
30
左右 17% 更低的延时
需要考虑的原因
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
报告一个错误
更快的读取速度,GB/s
16
12.8
测试中的平均数值
更快的写入速度,GB/s
10.6
8.3
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Kingston 9905471-001.A01LF 2GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
30
读取速度,GB/s
12.8
16.0
写入速度,GB/s
8.3
10.6
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1896
3026
Kingston 9905471-001.A01LF 2GB RAM的比较
Kingston 99U5316-058.A00LF 2GB
G Skill Intl F4-2666C19-8GIS 8GB
OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9965596-023.B01G 8GB
Unifosa Corporation HU564404EP0200 4GB
Samsung M471A1A43DB0-CPB 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Corsair CMW32GX4M4C3466C16 8GB
Kingston 99U5474-010.A00LF 2GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMK64GX4M8X4000C19 8GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston 9905599-020.A00G 8GB
报告一个错误
×
Bug description
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