Kingston 9905471-001.A01LF 2GB vs Samsung M378A2K43DB1-CTD 16GB

总分

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

总分

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

差异规格评论

差异

Kingston 9905471-001.A01LF 2GB

需要考虑的原因
Kingston 9905471-001.A01LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时

Samsung M378A2K43DB1-CTD 16GB

需要考虑的原因
Samsung M378A2K43DB1-CTD 16GB

报告一个错误

更快的读取速度，GB/s

15.3 12.8

测试中的平均数值
更快的写入速度，GB/s

11.9 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-001.A01LF 2GB

Samsung M378A2K43DB1-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

12.8 15.3
写入速度，GB/s

8.3 11.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1896 2981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Corsair CMD16GX4M2E4000C19 8GB

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Smart Modular SF4641G8CK8IEHLSBG 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Ramaxel Technology RMUA5200ME78HAF-3200 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMD16GX4M2B3200C16 8GB

Corsair CMD16GX4M2B3200C16 8GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Micron Technology TEAMGROUP-UD4-2133 16GB

Micron Technology TEAMGROUP-UD4-2133 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2400C15-4GRB 4GB

G Skill Intl F4-2400C15-4GRB 4GB

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