Kingston 9905471-001.A01LF 2GB vs SK Hynix MMA82GS6CJR8N-VK 16GB

总分

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

总分

SK Hynix MMA82GS6CJR8N-VK 16GB

SK Hynix MMA82GS6CJR8N-VK 16GB

差异规格评论

差异

Kingston 9905471-001.A01LF 2GB

需要考虑的原因
Kingston 9905471-001.A01LF 2GB

报告一个错误

SK Hynix MMA82GS6CJR8N-VK 16GB

需要考虑的原因
SK Hynix MMA82GS6CJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 25

左右 -9% 更低的延时
更快的读取速度，GB/s

16.4 12.8

测试中的平均数值
更快的写入速度，GB/s

8.8 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-001.A01LF 2GB

SK Hynix MMA82GS6CJR8N-VK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 23
读取速度，GB/s

12.8 16.4
写入速度，GB/s

8.3 8.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1896 2532

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kingston 9965600-023.A00G 16GB

Kingston 9965600-023.A00G 16GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

SK Hynix MMA82GS6CJR8N-VK 16GB

SK Hynix MMA82GS6CJR8N-VK 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Crucial Technology BL32G32C16U4B.M16FB1 32GB

Crucial Technology BL32G32C16U4B.M16FB1 32GB

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Samsung M378B5773DH0-CH9 2GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

A-DATA Technology AM1P26KCST2-BABS 16GB

A-DATA Technology AM1P26KCST2-BABS 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

Elpida EBJ10UE8BAFA-AE-E 1GB

Elpida EBJ10UE8BAFA-AE-E 1GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB