Kingston 9905471-001.A01LF 2GB vs Team Group Inc. TEAMGROUP-Ind-2666 8GB

总分

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

总分

Team Group Inc. TEAMGROUP-Ind-2666 8GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

差异规格评论

差异

Kingston 9905471-001.A01LF 2GB

需要考虑的原因
Kingston 9905471-001.A01LF 2GB

报告一个错误

Team Group Inc. TEAMGROUP-Ind-2666 8GB

需要考虑的原因
Team Group Inc. TEAMGROUP-Ind-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 25

左右 -4% 更低的延时
更快的读取速度，GB/s

15.9 12.8

测试中的平均数值
更快的写入速度，GB/s

12.4 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-001.A01LF 2GB

Team Group Inc. TEAMGROUP-Ind-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 24
读取速度，GB/s

12.8 15.9
写入速度，GB/s

8.3 12.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1896 2854

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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AMD R7416G2400U2S 16GB

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Samsung M378B5673EH1-CF8 2GB

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Samsung M378A1G44BB0-CWE 8GB

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Elpida EBJ41UF8BDW0-GN-F 4GB

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Corsair CMD16GX4M2E4000C19 8GB

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Kingston 9905403-156.A00LF 2GB

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Essencore Limited KD48GU881-26N190D 8GB

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Samsung M393B1G70BH0-CK0 8GB

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AMD R538G1601U2S 8GB

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G Skill Intl F4-2666C18-4GRS 4GB

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Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston 9905712-034.A00G 16GB

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Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Apacer Technology GD2.1140CH.001 4GB

Apacer Technology GD2.1140CH.001 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Gloway International Co. Ltd. YCT4S2666D19081C 8GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB