Kingston 9905471-006.A00LF 4GB vs Crucial Technology CT8G4DFS8213.C8FH1 8GB

总分

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

总分

Crucial Technology CT8G4DFS8213.C8FH1 8GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

差异规格评论

差异

Kingston 9905471-006.A00LF 4GB

需要考虑的原因
Kingston 9905471-006.A00LF 4GB

报告一个错误

Crucial Technology CT8G4DFS8213.C8FH1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8213.C8FH1 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 38

左右 -31% 更低的延时
更快的读取速度，GB/s

14.8 12.9

测试中的平均数值
更快的写入速度，GB/s

8.4 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-006.A00LF 4GB

Crucial Technology CT8G4DFS8213.C8FH1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 29
读取速度，GB/s

12.9 14.8
写入速度，GB/s

8.3 8.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2144 2458

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

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G Skill Intl F4-3400C16-16GVR 16GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3200C15-8GTZKY 8GB

G Skill Intl F4-3200C15-8GTZKY 8GB