Kingston 9905471-006.A01LF 4GB vs Crucial Technology CT4G4SFS8213.C8FADP 4GB

总分

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

总分

Crucial Technology CT4G4SFS8213.C8FADP 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

差异规格评论

差异

Kingston 9905471-006.A01LF 4GB

需要考虑的原因
Kingston 9905471-006.A01LF 4GB

报告一个错误

Crucial Technology CT4G4SFS8213.C8FADP 4GB

需要考虑的原因
Crucial Technology CT4G4SFS8213.C8FADP 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 -42% 更低的延时
更快的读取速度，GB/s

14.3 12

测试中的平均数值
更快的写入速度，GB/s

11.1 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-006.A01LF 4GB

Crucial Technology CT4G4SFS8213.C8FADP 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 26
读取速度，GB/s

12.0 14.3
写入速度，GB/s

7.5 11.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1853 2313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3466C18-8GTZRXB 8GB

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Kingston 9905471-006.A01LF 4GB

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Crucial Technology CT4G4SFS8213.C8FADP 4GB

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Kingston 9965596-036.B00G 8GB

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Kingston 99U5403-036.A00G 4GB

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InnoDisk Corporation 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M378A2G43MB1-CTD 16GB

Samsung M378A2G43MB1-CTD 16GB

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Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 36ASF2G72PZ-2G6E1 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3200C18-8GRS 8GB

G Skill Intl F4-3200C18-8GRS 8GB