Kingston 9905471-006.A01LF 4GB vs Kingston KVR800D2S6/4G 4GB

总分

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

总分

Kingston KVR800D2S6/4G 4GB

Kingston KVR800D2S6/4G 4GB

差异规格评论

差异

Kingston 9905471-006.A01LF 4GB

需要考虑的原因
Kingston 9905471-006.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 50

左右 26% 更低的延时
更快的写入速度，GB/s

7.5 1,923.1

测试中的平均数值
更高的内存带宽，mbps

10600 6400

左右 1.66% 更高的带宽

Kingston KVR800D2S6/4G 4GB

需要考虑的原因
Kingston KVR800D2S6/4G 4GB

报告一个错误

更快的读取速度，GB/s

4 12

测试中的平均数值

规格

完整的技术规格清单

Kingston 9905471-006.A01LF 4GB

Kingston KVR800D2S6/4G 4GB

主要特点

存储器类型

DDR3 DDR2
PassMark中的延时，ns

37 50
读取速度，GB/s

12.0 4,433.3
写入速度，GB/s

7.5 1,923.1
内存带宽，mbps

10600 6400

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

7-7-7-20 / 1333 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

1853 761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Kingston KVR800D2S6/4G 4GB

Kingston KVR800D2S6/4G 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

SK Hynix HMA82GS6CJR8N-XN 16GB

SK Hynix HMA82GS6CJR8N-XN 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905700-047.A00G 16GB

Kingston 9905700-047.A00G 16GB

Kingston 9905469-143.A00LF 4GB

Kingston 9905469-143.A00LF 4GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

Crucial Technology CT8G4DFD8213.C16FAR2 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Kingston 99U5663-001.A00G 16GB

Kingston 99U5663-001.A00G 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston 99U5663-001.A00G 16GB

Kingston 99U5663-001.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston 9905700-026.A00G 8GB

Kingston 9905700-026.A00G 8GB